VERTICAL MOS TECHNOLOGY WITH SUB-0.1-MU-M CHANNEL LENGTHS

A vertical MOSFET with a channel length of 85nm has been fabricated by molecular beam epitaxy. Compared to previous work, the electrical beh aviour has been greatly improved, allowing the use of standard simulat ion tools for analysing the I-V characteristics. From experimental and theoretical results, we conclude that for vertical MOSFETs, the usefu l minimum channel length is not limited by the technological constrain ts but by the physical limits of the electrical performance. The usefu l minimum channel length is estimated ro be similar to 80nm.