PSEUDOSPARK SWITCHES - TECHNOLOGICAL ASPECTS AND APPLICATIONS

Citation
R. Tkotz et al., PSEUDOSPARK SWITCHES - TECHNOLOGICAL ASPECTS AND APPLICATIONS, IEEE transactions on plasma science, 23(3), 1995, pp. 309-317
Citations number
28
Categorie Soggetti
Phsycs, Fluid & Plasmas
ISSN journal
00933813
Volume
23
Issue
3
Year of publication
1995
Pages
309 - 317
Database
ISI
SICI code
0093-3813(1995)23:3<309:PS-TAA>2.0.ZU;2-9
Abstract
We report results of the development of fast closing switches, so-call ed pseudospark switches, at Erlangen University. Two different paramet er regimes are under investigation: medium power switches (32 kV anode voltage, 30 kA anode current and 0.02 C charge transfer per shot) for pulsed gas discharge lasers and high power switches (30 kV anode volt age, 400 kA anode current and 3.4 C charge transfer per shot) for high current applications. The lifetime of these switches is determined by erosion of the cathode. The total charge transfer of devices with one discharge channel is about 220 kC for the medium and 27 kC for the hi gh power switch. At currents exceeding 45 kA a sudden increase in eros ion rate was observed. Multichannel devices are suited to increase lif etime as the current per channel can be reduced. Successful experiment s with radial and coaxial arrangements of the discharge channels were performed. In these Systems the discharge channels move due to magneti c forces. A skilful use of this phenomena will result in a considerabl y increase of switch lifetime. Multigap devices enable an increase of anode voltage, A three gap switch has run reliably at an anode voltage of 70 kV.