HYDROGEN DEFECT STATES IN GALLIUM-ARSENIDE - AB-INITIO CALCULATIONS

Citation
Tr. Adams et al., HYDROGEN DEFECT STATES IN GALLIUM-ARSENIDE - AB-INITIO CALCULATIONS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 72(2), 1995, pp. 183-192
Citations number
34
Categorie Soggetti
Physics, Applied
ISSN journal
09586644
Volume
72
Issue
2
Year of publication
1995
Pages
183 - 192
Database
ISI
SICI code
0958-6644(1995)72:2<183:HDSIG->2.0.ZU;2-C
Abstract
Ab initio calculations have been performed for the various hydrogen (o r muonium) charge states in GaAs. The equilibrium geometry of H+, H-0, and H- states and relative energies for trigonally symmetric sites on [111] axis were determined within two configurations of Ga7As7, clust ers. Effective core potentials were used on the Ga and As host atoms a nd all exterior bonds were terminated with hydrogens. The present resu lts are compared to available experimental information with emphasis o n recent Mu(-) data, and to previous theoretical treatments. We obtain a highly stable H- confined within a tetrahedral interstitial region with Ga nearest neighbours consistent with experimental findings.