INGAAS-INGAASP BURIED HETEROSTRUCTURE LASERS OPERATING AT 2.0-MU-M

Authors
OCHIAI M TEMKIN H FOROUHAR S LOGAN RA
Citation
M. Ochiai et al., INGAAS-INGAASP BURIED HETEROSTRUCTURE LASERS OPERATING AT 2.0-MU-M, IEEE photonics technology letters, 7(8), 1995, pp. 825-827
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
7
Issue
8
Year of publication
1995
Pages
825 - 827
Database
ISI
SICI code
1041-1135(1995)7:8<825:IBHLOA>2.0.ZU;2-P
Abstract
Buried heterostructure lasers with highly strained InGaAs-InGaAsP acti ve regions, emitting at 2 mu m have been fabricated and tested, The la sers exhibited threshold current densities of 500 A/cm(2) for 1-mm-lon g cavities, an internal loss of 11 cm(-1), and characteristic temperat ures as high as 50 degrees C, The gain characteristics were also inves tigated and a linewidth enhancement factor of 8 was determined.