LOW-THRESHOLD, HIGH-POWER, 1.3-MU-M WAVELENGTH, INGAASP-INP ETCHED-FACET FOLDED-CAVITY SURFACE-EMITTING LASERS

Authors
CHAO CP GARBUZOV DZ SHIAU GJ FORREST SR DIMARCO LA HARVEY MG
Citation
Cp. Chao et al., LOW-THRESHOLD, HIGH-POWER, 1.3-MU-M WAVELENGTH, INGAASP-INP ETCHED-FACET FOLDED-CAVITY SURFACE-EMITTING LASERS, IEEE photonics technology letters, 7(8), 1995, pp. 836-838
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
7
Issue
8
Year of publication
1995
Pages
836 - 838
Database
ISI
SICI code
1041-1135(1995)7:8<836:LH1WIE>2.0.ZU;2-E
Abstract
A 1.3-mu m wavelength, InGaAsP-InP folded-cavity, surface-emitting las er with CH4-H-2 reactive ion-etched vertical and 45 degrees angled fac ets was demonstrated for the first time, Continuous-wave threshold cur rents of 32 mA have been achieved,,vith >15 mW CW power for the surfac e-emitted light. These surface-emitting lasers with two dry-etched fac ets are suitable for wafer-level testing and for monolithic integratio n with other M-based photonic devices.