OPERATING CHARACTERISTICS OF INGAAS-GAAS MQW HETERO-NIPI WAVE-GUIDE MODULATORS

We report frequency response measurements of optical MQW nipi waveguid e modulators, observing a -3-dB band-width as high as 110 MHz, These d evices have only 900-Angstrom-thick intrinsic regions, and thus can ac hieve very high fields with modest reverse bias voltages, We also meas ured absorption modulation (32 dB) and a phase change figure of merit as low as V-pi x L = 0.8 V mm at a detuning of 115 meV below the photo luminescence peak, We compare ion-implanted selective contacts with tr aditional selective metal contacts.