TRANSPORT-PROPERTIES OF YBA2(CU1-XZNX)(3)O-7-DELTA FILMS

Zn doped epitaxial films of YBa2(Cu1-xZnx)(3)O-7-delta with 0 less tha n or equal to x less than or equal to 0.06 have been prepared by high- oxygen-pressure d.c. sputtering from stoichiometric targets on MgO sub strate. The temperature dependences of the transport properties were i nvestigated by electrical resistivity and Hall effect measurements. Th e transition temperatures and the Hall concentration per unit cell dec rease with increasing Zn content. The temperature dependence of the Ha ll density n(H) and T-2 dependence of the inverse mobility shows an an omaly around 250 K.