ELECTRICAL END-POINT DETECTION DURING ION-BEAM ETCHING OF THIN-FILMS AND MULTILAYERS

Authors
MATTHES A SCHMIDL F BARHOLZ KU ELSCHNER F SCHNEIDEWIND H SEIDEL P
Citation
A. Matthes et al., ELECTRICAL END-POINT DETECTION DURING ION-BEAM ETCHING OF THIN-FILMS AND MULTILAYERS, Superconductor science and technology, 8(8), 1995, pp. 676-679
Citations number
6
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter
Journal title
Superconductor science and technology → ACNP
ISSN journal
09532048
Volume
8
Issue
8
Year of publication
1995
Pages
676 - 679
Database
ISI
SICI code
0953-2048(1995)8:8<676:EEDDIE>2.0.ZU;2-8
Abstract
We propose the in situ measurement of the sample resistance to control the end-point detection during ion beam etching (IBE). The technical requirements are presented. Models for the time dependence of the resi stance during the IBE process are discussed and compared to the result s of our measurements on samples with thin films and multilayers which are usual in high-T-c superconducting technology.