A calculation procedure to determine the energy distribution of interf
ace states from the deep level transient spectroscopy spectrum measure
d in metal-insulator-semiconductor structures by means of the DLS-82E
lock-in spectrometer is described. Interface states in metal-boron nit
ride-WP and metal-oxide-Si capacitors have been examined by the DLS-82
E spectrometer to demonstrate the practical application of the propose
d procedure. (C) 1995 American Institute of Physics.