HIGH-QUALITY INAS1-YSBY INAS MULTILAYERS FOR MID-IR DETECTORS/

Authors
GONG XY KAN H MAKINO T YAMAGUCHI T NAKATSKASA T KUMAGAWA M ROWELL NL WANG A RINFRET R
Citation
Xy. Gong et al., HIGH-QUALITY INAS1-YSBY INAS MULTILAYERS FOR MID-IR DETECTORS/, Crystal research and technology, 30(5), 1995, pp. 603-612
Citations number
23
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
30
Issue
5
Year of publication
1995
Pages
603 - 612
Database
ISI
SICI code
0232-1300(1995)30:5<603:HIIMFM>2.0.ZU;2-T
Abstract
The high quality InAsSb multi-layers have been grown on InAs substrate by Gd-doped liquid phase epitaxy between 530 and 460 degrees C. Compo sitional dependence of energy band gap and of lattice constant for epi layers were studied. The material is characterized by surface morpholo gy observation, FTIR transmittance, photoluminescence (PL), spectro-el lipsometry, and electrical measurements. Surface-illuminated room temp erature p-n junction photodetectors in 3-5 mu m wavelength range have been obtained.