Atomic force microscopy studies of Ge/Si(001) molecular beam epitaxy g
rowth reveal a crucial new role of surface steps in the 2D to 3D trans
ition. At or near step flow we show that S-A steps undergo a stress-dr
iven triangular step instability. The resulting spatial variation of s
urface strain, although small, can dramatically influence the activati
on barrier for 3D island nucleation. This provides a surprising kineti
c route for the onset of 3D growth associated with the apex regions of
triangular steps.