STEP INSTABILITIES - A NEW KINETIC ROUTE TO 3D GROWTH

Citation
Km. Chen et al., STEP INSTABILITIES - A NEW KINETIC ROUTE TO 3D GROWTH, Physical review letters, 75(8), 1995, pp. 1582-1585
Citations number
18
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
75
Issue
8
Year of publication
1995
Pages
1582 - 1585
Database
ISI
SICI code
0031-9007(1995)75:8<1582:SI-ANK>2.0.ZU;2-1
Abstract
Atomic force microscopy studies of Ge/Si(001) molecular beam epitaxy g rowth reveal a crucial new role of surface steps in the 2D to 3D trans ition. At or near step flow we show that S-A steps undergo a stress-dr iven triangular step instability. The resulting spatial variation of s urface strain, although small, can dramatically influence the activati on barrier for 3D island nucleation. This provides a surprising kineti c route for the onset of 3D growth associated with the apex regions of triangular steps.