TUNNELING IONIZATION OF AUTOLOCALIZED DX(-) CENTERS IN TERAHERTZ FIELDS

Authors
GANICHEV SD YASSIEVICH IN PRETTL W DIENER J MEYER BK BENZ KW
Citation
Sd. Ganichev et al., TUNNELING IONIZATION OF AUTOLOCALIZED DX(-) CENTERS IN TERAHERTZ FIELDS, Physical review letters, 75(8), 1995, pp. 1590-1593
Citations number
21
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
75
Issue
8
Year of publication
1995
Pages
1590 - 1593
Database
ISI
SICI code
0031-9007(1995)75:8<1590:TIOADC>2.0.ZU;2-8
Abstract
Tunneling ionization of DX(-) centers in AlxGa1-xSb has been observed in terahertz radiation fields. Tunneling times have been measured for autolocalized and on-site deep impurities. It is shown that in one cas e the tunneling time is smaller and in the other larger than the recip rocal temperature multiplied by a universal constant due to the differ ent tunneling trajectories. This allows one to distinguish in a direct way between the two types of configuration potentials of impurities.