SHOT-NOISE SUPPRESSION IN THE SINGLE-ELECTRON TUNNELING REGIME

Citation
H. Birk et al., SHOT-NOISE SUPPRESSION IN THE SINGLE-ELECTRON TUNNELING REGIME, Physical review letters, 75(8), 1995, pp. 1610-1613
Citations number
20
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
75
Issue
8
Year of publication
1995
Pages
1610 - 1613
Database
ISI
SICI code
0031-9007(1995)75:8<1610:SSITST>2.0.ZU;2-X
Abstract
Electrical current fluctuations through tunnel junctions are studied w ith a scanning-tunneling microscope. For single-tunnel junctions class ical Poisson shot noise is observed, indicative for uncorrelated tunne ling of electrons. For double-barrier tunnel junctions, formed by a na noparticle between tip and surface, the shot noise is observed to be s uppressed below the Poisson value. For strongly asymmetric junctions, where a Coulomb staircase is observed in the current-voltage character istic, the shot-noise suppression is periodic in the applied voltage. This originates from correlations in the transfer of electrons imposed by single-electron charging effects.