CONVERSION ELECTRON MOSSBAUER-SPECTROSCOPY STUDY OF EPITAXIAL BETA-FESI2 GROWN BY MOLECULAR-BEAM EPITAXY

Citation
M. Fanciulli et al., CONVERSION ELECTRON MOSSBAUER-SPECTROSCOPY STUDY OF EPITAXIAL BETA-FESI2 GROWN BY MOLECULAR-BEAM EPITAXY, Physical review letters, 75(8), 1995, pp. 1642-1645
Citations number
14
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
75
Issue
8
Year of publication
1995
Pages
1642 - 1645
Database
ISI
SICI code
0031-9007(1995)75:8<1642:CEMSOE>2.0.ZU;2-H
Abstract
Epitaxial beta-FeSi2 grown by molecular beam epitaxy on Si(001) has be en studied by conversion electron Mossbauer spectroscopy with very goo d statistical accuracy and high resolution. This allowed investigation of the angular dependence of the line intensities revealing that the interpretation of the spectra in terms of a quadrupole coupling of two lines must be different from the one heretofore accepted. The electri c field gradients for the two Fe sites are antiparallel and in the bet a-FeSi2(001) direction. The isomer shifts are found in fair agreement with ab initio calculations.