SILICON-NEURON JUNCTION - CAPACITIVE STIMULATION OF AN INDIVIDUAL NEURON ON A SILICON CHIP

Citation
P. Fromherz et A. Stett, SILICON-NEURON JUNCTION - CAPACITIVE STIMULATION OF AN INDIVIDUAL NEURON ON A SILICON CHIP, Physical review letters, 75(8), 1995, pp. 1670-1673
Citations number
14
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
75
Issue
8
Year of publication
1995
Pages
1670 - 1673
Database
ISI
SICI code
0031-9007(1995)75:8<1670:SJ-CSO>2.0.ZU;2-G
Abstract
An identified nerve cell of the leech is attached to a planar silicon microstructure of p-doped silicon covered by a thin layer of insulatin g silicon oxide. A voltage step, applied between silicon and electroly te, induces a capacitive transient in the cell which elicits an action potential. The capacitive extracellular stimulation is described by a n equivalent electrical four-pole.