ANOMALOUS CURRENT-VOLTAGE CHARACTERISTICS AND THRESHOLD VOLTAGE SHIFTIN IMPLANTED-POLYSILICON-GATED COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH WITHOUT TITANIUM-POLYCIDE TECHNOLOGY

The current-voltage (I-V) characteristics and threshold voltage (V-t) of implanted-polycrystalline surface channel complementary metal-oxide -semiconductor field-effect transistors (CMOSFETs) with and without ti tanium-polycided polycrystalline silicon gate structures are compared. We find that the earlier punch-through phenomenon is caused by boron (B) penetration into the gate oxide and channel regions in the boron-i mplanted p(+)-polysilicon-gated device, and this degradation is reduce d by using titanium-polycide (Ti-polycide) technology. However, this p rocess results in a significant V-t shift. In addition, a detailed mod el for the kinetics of the B redistribution and the interface state ge neration during Ti-salicidation and after post thermal annealing is pr oposed to explain these phenomena.