AUGER DEPTH PROFILES OF A GAAS ALAS SUPERLATTICE STRUCTURE OBTAINED WITH O-2(+) AND AR+ ION SPUTTERING/

Employment of a LaB6 cathode with Re filament for an electron-bombardm ent ion gun has enabled O-2(+) ions as well as Ar+ ions to be provided for surface analysis in ultrahigh vacuum. This technique was applied to depth profiling of a GaAs/AlAs superlattice by monitoring the Auger peak-to-background ratio of the following high-energy peaks; Ga-LMM ( 1066 eV), As-LMM (1222 eV), Al-KLL (1390 eV) and O-KVV (508 eV). The e nergy shift of O-KVV Auger peak was also monitored. Results show the d eficiency of As atoms and the formation of Al oxides at the surface of O-2(+)-sputtered AlAs layers.