Ks. Yu et Jc. Lee, CURVE-FITTING A QUADRUPLE GAUSSIAN FUNCTION TO THE MONTE-CARLO SIMULATION RESULTS FOR PROXIMITY EFFECT CORRECTION PARAMETERS, Journal of the Korean Physical Society, 28(4), 1995, pp. 524-528
The curve fitting of a quadruple Gaussian function to Monte Carlo simu
lation results of absorbed energy distributions for electron beam lith
ography has been investigated. Monte Carlo simulation of electron-beam
exposure in a resist layer includes the effects of fast secondary ele
ctron generation and the scattering probability of a resist/substrate
interface. The energy density function in an electron resist layer can
be well approximated by a normalized quadruple Gaussian function in t
he entire electron scattering range when the ENERGY merit function is
used for the Si substrate and when the LOG merit function is used for
the Au substrate. The proximity correction parameters for line exposur
e can be mathematically obtained from the proximity correction paramet
ers for point exposure.