Mr. Turner et al., A FRACTURE-RESISTANCE MEASUREMENT METHOD FOR BIMATERIAL INTERFACES HAVING LARGE DEBOND ENERGY, Acta metallurgica et materialia, 43(9), 1995, pp. 3459-3465
Citations number
20
Categorie Soggetti
Material Science","Metallurgy & Metallurigical Engineering
Experimental results obtained for the DCDC specimen demonstrate its ca
pabilities for measuring the mode I fracture energy, Gamma(i), of bima
terial interfaces. Two specific characteristics have been highlighted.
(i) For interfaces characterized by a steady-state, Gamma(i), the abi
lity to obtain high-fidelity measurements over many millimeters of cra
ck extension has been validated. The demonstrations have been made for
glass/resin and sapphire/Au interfaces. Moreover, a concomitant abili
ty to monitor interactions between the growing crack and the microstru
cture, including interface defects, has been presented. (ii) For inter
faces that have differing mechanisms of crack growth initiation and pr
opagation, such as sapphire/Pt, an ability to distinguish the initiati
on and arrest fracture energies has been illustrated. The correspondin
g capacity to monitor the associated mechanisms by optical microscopy
has also been demonstrated.