CONFINED ELECTRON-OPTICAL PHONON-SCATTERING RATES IN 2D STRUCTURES CONTAINING ELECTRON AND PHONON WALLS

Citation
J. Pozela et al., CONFINED ELECTRON-OPTICAL PHONON-SCATTERING RATES IN 2D STRUCTURES CONTAINING ELECTRON AND PHONON WALLS, Semiconductor science and technology, 10(8), 1995, pp. 1076-1083
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
10
Issue
8
Year of publication
1995
Pages
1076 - 1083
Database
ISI
SICI code
0268-1242(1995)10:8<1076:CEPRI2>2.0.ZU;2-V
Abstract
Two-dimensional structures containing the electron wall (the barrier t ransparent to phonons and impenetrable by electrons) and (or) the phon on wall (the barrier transparent to electrons and impenetrable by phon ons) are proposed. The intrasubband (1-->1) and intersubband (2-->1) e lectron-polar optical phonon scattering rates are calculated for the q uantum well divided by an electron wall or a phonon wall. Independent electron and phonon confinement caused by the electron and phonon wall s is taken into account, and a radical change of the scattering rate i s obtained. The electron wall increases, and the phonon wall decreases , the confined electron-confined optical phonon scattering rate by sev eral times.