J. Pozela et al., CONFINED ELECTRON-OPTICAL PHONON-SCATTERING RATES IN 2D STRUCTURES CONTAINING ELECTRON AND PHONON WALLS, Semiconductor science and technology, 10(8), 1995, pp. 1076-1083
Two-dimensional structures containing the electron wall (the barrier t
ransparent to phonons and impenetrable by electrons) and (or) the phon
on wall (the barrier transparent to electrons and impenetrable by phon
ons) are proposed. The intrasubband (1-->1) and intersubband (2-->1) e
lectron-polar optical phonon scattering rates are calculated for the q
uantum well divided by an electron wall or a phonon wall. Independent
electron and phonon confinement caused by the electron and phonon wall
s is taken into account, and a radical change of the scattering rate i
s obtained. The electron wall increases, and the phonon wall decreases
, the confined electron-confined optical phonon scattering rate by sev
eral times.