PHOTOLUMINESCENCE AND RAMAN-SCATTERING FROM GAN LAYERS GROWN ON GAAS AND GAP SUBSTRATES

Authors
ZINOVEV NN ANDRIANOV AV AVERBUKH BY YAROSHETSKII ID CHENG TS JENKINS LC HOOPER SE FOXON CT ORTON JW
Citation
Nn. Zinovev et al., PHOTOLUMINESCENCE AND RAMAN-SCATTERING FROM GAN LAYERS GROWN ON GAAS AND GAP SUBSTRATES, Semiconductor science and technology, 10(8), 1995, pp. 1117-1121
Citations number
27
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
8
Year of publication
1995
Pages
1117 - 1121
Database
ISI
SICI code
0268-1242(1995)10:8<1117:PARFGL>2.0.ZU;2-P
Abstract
We report comprehensive photoluminescence, Raman scattering and photol uminescence excitation data on GaN layers grown by MBE on GaAs and GaP substrates. The main photoluminescence feature of GaN layers correspo nds to the recombination of free carriers from conduction and valence bands. It is supported by both photoluminescence and photoluminescence excitation spectroscopic data. The origin of impurity-assisted photol uminescence is discussed. We also report the Raman spectra on cubic Ga N films.