BROADENING OF NOISE SPECTRA IN SEMICONDUCTORS AND THE 1 F(1.5) PROBLEM/

it has been shown that the low-frequency 1/f(1,5) noise in GaAs and Si C, and occasionally in Si, exists in the temperature region where a ge neration-recombination (GR) noise predominates that is due to a local level, The 1/f(1,5) noise can be accounted for by energy level broaden ing, which inevitably occurs in any real crystal as a result of struct ural or doping inhomogeneities and defects. GR noise simulations were performed for GaAs and SIG, taking into account the effect of broadeni ng. It has been shown that, to explain the experimental results, consi deration must be given to the exponential energy dependence of the cap ture cross section sigma(n) = sigma(o) exp(-E(1)/kT) and the dependenc e of the energy E(1) on the level position E(o), The simulated and exp erimental results are in good agreement.