Pjp. Tang et al., 4-11 MU-M INFRARED-EMISSION AND 300 K LIGHT-EMITTING-DIODES FROM ARSENIC-RICH INAS1-XSBX STRAINED-LAYER SUPERLATTICES, Semiconductor science and technology, 10(8), 1995, pp. 1177-1180
Arsenic-rich InAs/InAs1-xSbx strained layer superlattices (SLSs) grown
on GBAs substrates by molecular beam epitaxy (MBE) are studied for th
eir potential application as infrared emitters. The long-wavelength em
ission (4-11 mu m) is highly sensitive to superlattice design paramete
rs and is accounted for by a large type-ii band offset, greater than i
n previously studied antimony-rich InSb/InAs1-xSbx SLSs. High internal
PL efficiencies (>10%) and intense luminescence emission were observe
d at these long wavelengths despite large dislocation densities. Initi
al unoptimized InAs/InAs1-xSbx SLS light emitting diodes gave approxim
ate to 200 nW of lambda = 5 mu m emission at 300 K.