4-11 MU-M INFRARED-EMISSION AND 300 K LIGHT-EMITTING-DIODES FROM ARSENIC-RICH INAS1-XSBX STRAINED-LAYER SUPERLATTICES

Citation
Pjp. Tang et al., 4-11 MU-M INFRARED-EMISSION AND 300 K LIGHT-EMITTING-DIODES FROM ARSENIC-RICH INAS1-XSBX STRAINED-LAYER SUPERLATTICES, Semiconductor science and technology, 10(8), 1995, pp. 1177-1180
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
10
Issue
8
Year of publication
1995
Pages
1177 - 1180
Database
ISI
SICI code
0268-1242(1995)10:8<1177:4MIA3K>2.0.ZU;2-W
Abstract
Arsenic-rich InAs/InAs1-xSbx strained layer superlattices (SLSs) grown on GBAs substrates by molecular beam epitaxy (MBE) are studied for th eir potential application as infrared emitters. The long-wavelength em ission (4-11 mu m) is highly sensitive to superlattice design paramete rs and is accounted for by a large type-ii band offset, greater than i n previously studied antimony-rich InSb/InAs1-xSbx SLSs. High internal PL efficiencies (>10%) and intense luminescence emission were observe d at these long wavelengths despite large dislocation densities. Initi al unoptimized InAs/InAs1-xSbx SLS light emitting diodes gave approxim ate to 200 nW of lambda = 5 mu m emission at 300 K.