Xm. Tong et al., HEAT-ENERGY DEPOSITION IN X-RAY INTERACTION WITH MATERIALS APPLICATION TO SI AND BE, Journal of applied physics, 78(4), 1995, pp. 2288-2297
Based on the analysis of the micro-processes due to the interaction of
synchrotron radiation with materials, we have developed a theoretical
method to calculate the heat energy deposited when synchrotron radiat
ion passes through insert devices (filters, mirrors or monochromators)
. The micro-processes are photoionization, Compton scattering, Rayleig
h scattering, electron elastic and inelastic collisions, electron Brem
sstrahlung scattering and the Auger process. The energy of x rays is c
onverted into the electrons' kinetic energy and atomic excitation ener
gy by photoionization and Compton scattering. High-energy photoelectro
ns slow down mainly through inelastic collisions with the atoms in mat
erials. The energy deposition in a material is simulated according to
the x-ray atom interaction cross sections and photoelectron-atom colli
sion cross sections. The results of a calculation for x rays traversin
g Si and Be plates of 1.0 cm in thickness are presented and discussed
as one typical example concerning important materials in optical devic
es. The dependence of the energy deposition on the angle of incidence
of the x rays is also discussed. Both the utility and validity of the
present simulation method are discussed. (C) 1995 American Institute o
f Physics.