Fy. Shi et al., ATOMIC TRANSPORT AND PHASE-FORMATION IN THE SB AL SYSTEM INDUCED BY HEAVY-ION BOMBARDMENT/, Journal of applied physics, 78(4), 1995, pp. 2303-2310
Antimony/aluminium films in bilayer and multilayer geometries were irr
adiated at liquid-nitrogen temperature with 50-900 keV ion beams rangi
ng in mass from Ne-20 to Pb-208. Depth profiling of the element concen
trations was carried out via Rutherford backscattering spectroscopy. T
he formation of intermetallic phases and phase segregation was analyze
d by means of x-ray diffraction, cross-section transmission electron m
icroscopy, and scanning electron microscopy. From the low-dose irradia
tion data, the mixing rates k were obtained and found to depend linear
ly on the energy density F-D deposited at the interface. The mixing ef
ficiency of Sb/A1 bilayers, k/F-D=296(30) Angstrom(5)/eV, supports the
local thermal spike model. After high-fluence irradiations of Sb/Al b
ilayers with 550 keV Xe++ ions, a reacted layer of crystalline SbAl (B
-3 phase) at the interface was observed. Sb/Al multilayers irradiated
with 900 keV Xe++ ions were found to become amorphous. Phase formation
was studied as a function of the ion fluence, irradiation energy, and
ion mass, and was found to start at that fluence, where cracking and
shrinking of the Sb top layer and an increase of the sputtering yield
were also observed. (C) 1995 American Institute of Physics.