ELECTRON-CAPTURE AND EMISSION BY THE TI ACCEPTOR LEVEL IN GAP

Citation
P. Roura et al., ELECTRON-CAPTURE AND EMISSION BY THE TI ACCEPTOR LEVEL IN GAP, Journal of applied physics, 78(4), 1995, pp. 2441-2446
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
78
Issue
4
Year of publication
1995
Pages
2441 - 2446
Database
ISI
SICI code
0021-8979(1995)78:4<2441:EAEBTT>2.0.ZU;2-3
Abstract
Previously reported results on deep level optical spectroscopy, optica l absorption, deep level transient spectroscopy, photoluminescence exc itation, and time resolved photoluminescence are reviewed and discusse d in order to know which are the mechanisms involved in electron captu re and emission of the Ti acceptor level in GaP. First, the analysis i ndicates that the T-3(1)(F) crystal-field excited state is not in reso nance with the conduction band states. Second, it is shown that both t he T-3(2) and T-3(1)(F) excited;states do not play any significant rol e in the process of electron emission and capture. (C) 1995 American l nstitute of Physics.