H. Akazawa et Y. Utsumi, REACTION-KINETICS IN SYNCHROTRON-RADIATION-EXCITED SI EPITAXY WITH DISILANE .1. ATOMIC LAYER EPITAXY, Journal of applied physics, 78(4), 1995, pp. 2725-2739
We investigated the mechanism of silicon crystal growth mediated by a
surface photochemical reaction. The growth process consists of reactiv
e sticking of disilane (Si2H6) onto a partially hydrogen covered surfa
ce followed by the photon-stimulated desorption of hydrogen atoms and
consequent regeneration of dangling bonds. The saturation coverage of
Si admolecules resulting from self-limiting chemisorption of disilane
was found to be 0.42 monolayer (ML), and the ejection of H+ and H-2(+)
ions was observed by time-of-flight mass spectroscopy. Hydrogen remov
al by the purely electronic process differs from thermal desorption, h
owever, in that not all of the hydrogen is removed. Analysis of film g
rowth by repetition of the cycle of disilane exposure, evacuation, and
synchrotron radiation irradiation showed that the onset temperature o
f thermal growth (350 degrees C) is the same as that of H-2 desorption
from the dihydride species. Below 350 degrees C a digital growth of 0
.18 ML/cycle occurs over a wide range of gas exposure times, irradiati
on times, substrate temperatures, and the irradiation intensities. If
the temperature is raised to facilitate thermal desorption of hydrogen
atoms and migration of Si adatoms, the number of Si adatoms delivered
in each cycle increases significantly. Photolytic, thermal, and photo
thermal effects result in growth rates of 0.4 ML/cycle at 430 degrees
C and 1 ML/cycle 480 degrees C. (C) 1995 American Institute of Physics
.