ALUMINUM AND NICKEL CONTACT METALLIZATIONS ON THIN-FILM DIAMOND

Aluminum and nickel contact metallizations have been investigated on p olycrystalline, randomly oriented diamond films of varying dopant conc entrations. Hall measurements have been used to characterize the diamo nd films to indicate good control of dopant incorporation with carrier mobility comparable with those of the highest reported in similar fil ms. Rectifying characteristics have been observed for both Al and Ni c ontacts provided the sheet resistance of the films is greater than 120 0 Omega/sq. The thermal stability of these contacts have been investig ated to 400 degrees C and Al diodes have been found to be electrically stable to such treatments. (C) 1995 American Institute of Physics.