PHOTOLUMINESCENCE OF 3 PHONON REPLICAS OF THE BOUND EXCITON IN UNDOPED INGAP PREPARED BY LIQUID-PHASE EPITAXY

Photoluminescence and Raman spectroscopies are employed to study undop ed InGaP layers grown on GaAs (100) substrates at 750 degrees C by Liq uid phase epitaxy. There are four peaks in the photoluminescence spect rum in the energy range between 1.55 and 2.25 eV. Besides a bound exci ton recombination, three longitudinal optical phonon replicas with one superimposed donor-acceptor emission are identified based upon their dependences of emission energies on temperature and excitation intensi ty. (C) 1995 American Institute of Physics.