RADIATION-DAMAGE STUDIES OF FIELD PLATE AND P-STOP N-SIDE SILICON MICROSTRIP DETECTORS

Authors
MATHESON J MOSER HG ROE S WEILHAMMER P MOSZCZYNSKI S DABROWSKI W GRYBOS P IDZIK M SKOCZEN A GILL K HALL G MACEVOY B VITE D WHEADON R ALLPORT P GREEN C RICHARDSON J APSIMON R EVENSEN L AVSET B GIUBELLINO P RAMELLO L
Citation
J. Matheson et al., RADIATION-DAMAGE STUDIES OF FIELD PLATE AND P-STOP N-SIDE SILICON MICROSTRIP DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 362(2-3), 1995, pp. 297-314
Citations number
26
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
362
Issue
2-3
Year of publication
1995
Pages
297 - 314
Database
ISI
SICI code
0168-9002(1995)362:2-3<297:RSOFPA>2.0.ZU;2-I
Abstract
We present results from studies of the properties of dedicated n-side microstrip structures before and after irradiation, with photons to 7 Mrad and fast neutrons to 8 X 10(13) n cm(-2). Both p-stop and field p late devices were investigated, each having a range of strip geometrie s in order to determine optimal configurations for long-term viability and performance.