GROWTH OF TLBA2CACU2O7 THIN-FILMS USING A CONTROLLED TL-OXIDE SOURCE DURING PROCESSING

Authors
SIEGAL MP MISSERT N VENTURINI EL NEWCOMER PP DOMINGUEZ F DUNN R
Citation
Mp. Siegal et al., GROWTH OF TLBA2CACU2O7 THIN-FILMS USING A CONTROLLED TL-OXIDE SOURCE DURING PROCESSING, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 1343-1346
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE transactions on applied superconductivity → ACNP
ISSN journal
10518223
Volume
5
Issue
2
Year of publication
1995
Part
2
Pages
1343 - 1346
Database
ISI
SICI code
1051-8223(1995)5:2<1343:GOTTUA>2.0.ZU;2-T
Abstract
TlBa2CaCu2O7 superconducting films 5000 - 6000 Angstrom thick have bee n grown on LaAlO3(100) substrates using oxide precursors in a two-zone thallination furnace. Smooth, nearly phase-pure 1212 films are report ed, with transition temperature (T-c) similar to 87K, and low-magnetic , field critical current densities J(c)(5K) similar to 1 x 10(7) and J (c)(40K) similar to 2 x 10(6) A/cm(2).