BA1-XKXBIO3 EPITAXY ON VARIOUS SUBSTRATE MATERIALS

We have fabricated Ba1-xKxBiO3 (BKBO) films by thermal co-evaporation of the metals K, Ba and Bi To improve the epitaxy a high temperature B aBiO3 Seed layer is deposited prior to the BKBO film which results in T-C values up to 24 K on standard substrates. As BKBO grows well on pe rovskites we deposited thin PrBa2Cu3O7 (PBCO) layers by thermal co-eva poration on MgO, CeO2 buffered sapphire, YSZ buffered Si and YSZ subst rates. BKBO films on these systems are epitaxial and show the same T-C values as on standard substrates, Thus, by using a PBCO buffer layer technical substrates are available for BKBO thin films.