AFM AND TEM STUDIES ON HIGH-QUALITY BI-2223 THIN-FILMS GROWN BY MOCVD

Citation
K. Endo et al., AFM AND TEM STUDIES ON HIGH-QUALITY BI-2223 THIN-FILMS GROWN BY MOCVD, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 1675-1679
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
10518223
Volume
5
Issue
2
Year of publication
1995
Part
2
Pages
1675 - 1679
Database
ISI
SICI code
1051-8223(1995)5:2<1675:AATSOH>2.0.ZU;2-E
Abstract
AFM and Tem observations of high-quality Bi-2223 thin films grown by M OCVD have been carried out to elucidate the crystal growth been carrie d out to elucidate the crystal growth mechanisms and the effect of sur face structures on superconducting properties. AFM images of the film surfaces grown on flat planes (off-angle<0.3 deg.) of LaAlO3, SrTiO3 a nd MgO (001) substrates showed a 2-dimensional nucleation growth . In contrast, those on vicinal (off-angle similar to 3 deg.) of LaAl03, Sr TiO3 and Nd:YalO3 (001) substrates showed a step flow growth. The film s grown on LaAlO3, SrTiO3 and Nd:AlO3 showed the highest Tc(0) of 97K reported for as-grown BSCCO films. In addition, a TEM plan-view image of the film grown on (001) LaAlO3 showed clearly the misfit dislocatio n network running along the orthogonal [110] directions at the heteroi nterface and having Burger's vectors b=1/2[110]. The clear AFM image o f regularly-shaped terrace or step-edge and the distinct TEM image of the misfit dislocation network are the evidence of high-quality MOCV g rown Bi-2223.