Mg. Meere et Jr. King, AN ASYMPTOTIC ANALYSIS OF THE KICK-OUT DIFFUSION MECHANISM, Zeitschrift fur angewandte Mathematik und Physik, 46(4), 1995, pp. 546-565
The kick-out model for impurity diffusion in semiconductors is studied
. The kick-out mechanism is thought to play an important role in a num
ber of applications, including the diffusion of zinc and chromium in g
allium arsenide. Asymptotic solutions are derived for both one- and tw
o-dimensional surface source problems. In the one-dimensional case, a
mechanism for the destruction of self-interstitials is also incorporat
ed. The calculated diffusion profiles have shapes which are typical of
diffusion systems in which the kick-out mechanism is believed to be a
ctive. For the two-dimensional problem, contours of constant impurity
concentration are calculated and some are found to have the 'bird's be
ak' shape which is frequently observed in experiments.