Hg1-xZnxTe crystals were grown by the traveling heater method. The com
position and crystalline quality of ingots were analyzed by electrolyt
e electroreflectance experiment. The far-infrared reflection spectra o
f Hg1-xZnxTe crystals with various composition x were measured at temp
eratures ranging from 90 K to 295 K in the wavenumber region of 60 to
450 cm(-1). In all but the pure compounds, HgTe and ZnTe, a two TO pho
non structure was clearly observed. The optical phonon frequencies wer
e well-determined by both the Kramers-Kronig integrations and the dyna
mic dielectric function fitting, and their temperature dependence is d
iscussed.