Vv. Borzenets et al., ELECTRON-MOBILITY BEHAVIOR FOR SI(001) INVERSION-LAYERS NEAR MOBILITYTHRESHOLD BELOW 1.3 K, Physics letters. A, 204(1), 1995, pp. 67-70
We have investigated the electron mobility of high mobility Si MOSFETs
near a metal-insulator transition at temperatures below 1.3 K and low
current densities in a zero magnetic field. In this regime a new shar
p peak of the field effect mobility was found at carrier densities jus
t above the metal-insulator transition, The peak increases with decrea
sing temperature and becomes wider with increasing current, We attribu
te this effect to cold melting of the electronic crystal.