ENERGETICS OF MICROVOID FORMATION IN SI FROM SUPERSATURATED VACANCIES

Using a Tersoff-type empirical potential energy function, the free ene rgy of formation for microvoids in silicon containing from 1 to 57 vac ancies was calculated asa function of temperature and vacancy supersat uration. The results apply equally well to microvoid nucleation during crystal growth or, at low temperatures, as a consequence of ion impla ntation. The results indicate that homogeneous nucleation is an unlike ly process for the crystal growth case where heterogeneous nucleation via adsorbate attachment to the microvoid surface is a very likely pro cess. (C) 1995 American Institute of Physics.