PHOTOLUMINESCENCE PROPERTIES OF 13X13 NM GAAS QUANTUM WIRES BURIED INTRENCH STRUCTURES REDUCED BY GROWING GAAS ALAS SUPERLATTICE LAYERS/

We report lateral-size control of GaAs/AlAs trench-buried quantum wire s (QWRs) on a scale of 10 nm by metalorganic chemical vapor deposition using nonplanar substrates. The lateral width is reduced to 12-13 nm by growing GaAs/AlAs superlattice layers (SLs) on the (110) sidewall f acets of the trenches, where the roughness of the SL sidewalls is appr oximately several monolayers. Low-temperature photoluminescence (PL) p roperties of nearly square 13X13 nm QWRs buried in the trenches exhibi t a strong PL blue shift of 85 meV with respect to the band-gap energy of GaAs bulk and PL polarization anisotropy of 25% due to two-dimensi onal quantum confinement effects. The emission from Ga-rich AlGaAs reg ions in the trenches constituting AlGaAs vertical quantum wells was al so observed. We demonstrate that substituting GaAs/AlAs SLs for the Al GaAs layer effectively eliminates the undesired emission levels caused by the inevitable Al content fluctuation in the AlGaAs layer grown on nonplanar structures. (C) 1995 American Institute of Physics.