BE INCORPORATION AND SURFACE MORPHOLOGIES IN HOMOEPITAXIAL INP FILMS

We have studied the mechanism of Be incorporation in InP homoepitaxial films grown by metalorganic molecular beam epitaxy. The actual Be con centration in the films reaches 1-2X10(19)cm(-3) while the hole concen tration saturates at a lower value (similar to 2X10(18)cm(-3) in our c ase). The measured lattice mismatch between him and substrate depends both on growth temperature and Be flux. The resulting changes in morph ology suggest that the excess Be forms microclusters in the films grow n at higher temperatures-due to the higher surface mobility, leading t o the growth of oval defects. Be rejection to the surface is also obse rved. The surfaces of samples with no cap layer present a granulation which may be related to the formation of a new phase like Be3P2. (C) 1 995 American Institute of Physics.