Mh. Tsai et al., METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION, Applied physics letters, 67(8), 1995, pp. 1128-1130
We deposited tantalum nitride (TaN) frlrns by low-pressure metalorgani
c chemical vapor deposition (LP-MOCVD) using a new precursor tertbutyl
imidotris(diethylamido)tantalum (TBTDET). Strong Ta-N double bond in t
he precursor preserved the ''TaN'' portion during the pyrolysis proces
s. This method has yielded low-resistivity films. It changed from 10 m
Omega cm (deposited at 500 degrees C) to 920 mu Omega cm (obtained at
650 degrees C). The carbon and oxygen concentrations were low in the
films deposited at 600 degrees C, as determined by x-ray photoelectron
spectroscopy. Transmission electron microscopy and x-ray diffraction
analysis indicated that the as-deposited films exhibited polycrystalli
ne structures with the lattice constants close to the bulk TaN value.
The TaN barrier layer was successfully applied as a glue layer for CVD
tungsten (W) metallization schemes. (C) 1995 American Institute of Ph
ysics.