STRAIN COMPENSATION IN SI1-XGEX BY HEAVY BORON DOPING

Strain compensation in SiGe by heavy boron doping was demonstrated. Fo r this purpose, SiGe layers containing up to several percent of boron were deposited using rapid thermal chemical vapor deposition. The stra in compensation effect was evaluated by double crystal x-ray diffracti on measuring the difference between the diffraction peak distances of the boron doped samples and a reference sample without boron which can be directly related to the decrease of the lattice constant in Sil(1- x-y)Ge(x)B(y) due to the incorporation of boron. The films were charac terized by cross-sectional transmission electron microscopy (XTEM), Au ger electron spectroscopy (AES), and secondary ion mass spectroscopy ( SIMS). (C) 1995 American Institute of Physics.