SCANNING-TUNNELING-MICROSCOPY BASED LITHOGRAPHY EMPLOYING AMORPHOUS HYDROGENATED CARBON AS A HIGH-RESOLUTION RESIST MASK

Citation
K. Kragler et al., SCANNING-TUNNELING-MICROSCOPY BASED LITHOGRAPHY EMPLOYING AMORPHOUS HYDROGENATED CARBON AS A HIGH-RESOLUTION RESIST MASK, Applied physics letters, 67(8), 1995, pp. 1163-1165
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
67
Issue
8
Year of publication
1995
Pages
1163 - 1165
Database
ISI
SICI code
0003-6951(1995)67:8<1163:SBLEAH>2.0.ZU;2-A
Abstract
Amorphous hydrogenated carbon (a-C:H) is introduced as a constituent o f a two-layer resist system for lithography with a scanning tunneling microscope (STM) operating in air. The resist is made up of a thin ele ctron sensitive and chemically amplified top resist (less than or equa l to 50 nm) and a-C:H as a thick conducting and etchable bottom resist . In this setup the bottom resist acts as the counter electrode allowi ng in principle operation on insulating substrates. We show that it is possible to generate structures with high aspect ratios by transferin g the developed top resist patterns by means of oxygen reactive ion et ching (RIE) into the bottom resist and halogen RIE into silicon substr ates. Linewidths between 100 and 50 nm have been observed in the botto m resist as well as in the substrates. (C) 1995 American Institute of Physics.