HYDROGEN DIFFUSION AND TRAPPING IN MICRO-NANOCRYSTALLINE SILICON

Effusion experiments and Secondary Ion Mass Spectrometry (SIMS) profil ing are performed on post-hydrogenated (deuterated) micro-nanocrystall ized silicon films obtained by thermal annealing of amorphous sputtere d layers. The analysis of the effusion spectra and SIMS profiles allow s to evidence the existence of cavities containing molecular hydrogen, the presence of weakly bonded hydrogen in small clusters and hydrogen trapped at grain boundaries. These results are analysed with regard t o the microstructure of the crystallized layers studied by Transmissio n Electron Microscopy. This microstructure depends on the conditions o f deposition of the original amorphous layers.