DESIGN AND REALIZATION OF HIGH-VOLTAGE MO S THYRISTOR DEVICE

We present here the results obtained in the design and fabrication of high voltage M.O.S thyristor device. In this context, we intend to stu dy the potentialities of this kind of device and to develop a high vol tage planar technological process to realize the device based on the c oncept of functionnal integration of M.O.S and thyristor elements. To optimize this integrated device, an analytical model and 2D electrical simulator PISCES are used. The optimization of the technological proc ess is obtained by using the 1D and 2D technological simulator SUPREM IV. These devices are fabricated and tested. These structures present interesting electrical characteristics such as high dV/dt capability w hich is about 10.000 V/mu s. We discuss these potentialities and compa re them to the classical thyristor structure.