We investigate a new type of resonant behaviour in the 1D hot-electron
ballistic transport in nanostructures. The resonances are manifested
by sharp increases in the rate of optical phonon generation and are ac
companied by sharp drops in the overall current. They occur whenever t
he separation between a pair of levels of transverse quantization is e
qual to the energy of an optical phonon, HBAR omega(0), and a conditio
n for generation of optical phonons eV > HBAR omega(0), is met, where
V is the voltage bias across the conductor. We calculate the rate of e
nergy transfer from the electrons to phonons. The ratio between the de
crease in electric current power and the rate of energy transfer from
electrons to phonons appears to be linearly proportional to the voltag
e bias.