R-CURVE BEHAVIOR OF SINTERED SILICON-NITRIDE

R-curves for two in situ reinforced silicon nitrides A and B of differ ent microstructures were determined by three different characterizatio n methods. The saturated crack growth resistance was found to be 5.2, 7.2 and 9.2 MPa m(1/2) for silicon nitride A and 5.8, 8.0 and 10.0 MPa m(1/2) for silicon nitride B, respectively, by indentation, indentati on-crack growth, and indentation-strength methods. The rising behaviou r of R-curves was also found to depend on the characterization method. These results indicate that care should be taken in interpreting and utilizing R-curves, evaluated from different characterization methods a nd an R-curve characterization method with appropriate qualifiers is needed for rising R-curve materials.