CHARACTERISTICS OF DEEPLY LI-DOPED POLYACENIC SEMICONDUCTOR MATERIAL AND FABRICATION OF A LI SECONDARY BATTERY

Authors
YATA S HATO Y KINOSHITA H ANDO N ANEKAWA A HASHIMOTO T YAMAGUCHI M TANAKA K YAMABE T
Citation
S. Yata et al., CHARACTERISTICS OF DEEPLY LI-DOPED POLYACENIC SEMICONDUCTOR MATERIAL AND FABRICATION OF A LI SECONDARY BATTERY, Synthetic metals, 73(3), 1995, pp. 273-277
Citations number
17
Categorie Soggetti
Physics, Condensed Matter","Metallurgy & Metallurigical Engineering
Journal title
Synthetic metals → ACNP
ISSN journal
03796779
Volume
73
Issue
3
Year of publication
1995
Pages
273 - 277
Database
ISI
SICI code
0379-6779(1995)73:3<273:CODLPS>2.0.ZU;2-0
Abstract
Electrochemical properties of deeply Li-doped polyacenic semiconductor (PAS) material have been investigated. It has been found that a PAS e lectrode can be doped up to the C2Li stage without any Li-metal electr olysis and that it has a reversible capacity of 850 mAh/g. Fabrication of the secondary PAS battery of the cylindrical type has also been at tempted. The energy density of this battery has turned out to be 450 W h/1, which is about twice as large as that of conventional Li-ion batt eries.