Nanostructured ZnTe films have been deposited by high pressure d.c. ma
gnetron sputtering onto glass substrates. The variation of electrical
conductivity with temperature was measured in the temperature range of
100-300 K. The conductivity is found to vary as T--1/2 within a tempe
rature range 100-150 K, indicating variable range hopping within a Cou
lomb gap.