APPARATUS ELECTRON-BEAM MICROTOMOGRAPHY IN SEM

The methods of SEM ''apparatus'' tomography for layer-by-layer reconst ruction of composition, electrical and optical properties are discusse d. It is shown that the energy dispersive detection of backscattering electrons or the study of the dependence of the backscattering coeffic ient on primary electron energy can be considered as examples of such methods. It is shown that the methods of modulated CL and modulated EB IC allow to reconstruct the depth distribution of electrical and optic al properties in semiconductor structures. The depth resolution of all methods discussed can achieve 10 nm.