LATTICE-DEFECTS IN ION-IMPLANTED GAAS

Authors
PASHOV N VITALI G KALITZOVA M ROSSI M
Citation
N. Pashov et al., LATTICE-DEFECTS IN ION-IMPLANTED GAAS, Physica status solidi. a, Applied research, 150(1), 1995, pp. 239-245
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
150
Issue
1
Year of publication
1995
Pages
239 - 245
Database
ISI
SICI code
0031-8965(1995)150:1<239:LIIG>2.0.ZU;2-1
Abstract
High-resolution transmission electron microscopy and digital filtering (by Bragg filters) are used to study the atomic structure of the dama ge arising in the isolated displacement cascades of Zn+ implanted GaAs . Data concerning the clustering of point defects (vacancies and self- interstitials) in small dislocation loops, at concentration of the ord er of 10(13) cm(-2), are reported. Effects of low-power pulsed laser a nnealing (LPPLA) and some analogies in the behaviour of point defects in GaAs and f.c.c. metals like Cu and Ni are discussed.